iterra communications 2400 geng road, ste. 100, palo alto, ca 94303 phone (650) 424-1937 fax(650) 424-1938 r3.1 sept. 22, 2004 doc. 1327 page 1 of 6 www.iterrac.com ITR33001 33 ghz buffer amplifier mmic this is a production data sheet. se e ?product status definitions? on web site or catalog for product development status. description ? 4 mil substrate ? small-signal gain 24 db (typ.) ? saturated power out 19 dbm (typ.) ? voltage detector included to monitor pout ? chip size 3.2 mm x 1.2 mm x 100 m features the ITR33001 is a 4-stage gaas mmic amplifier desig ned as a 33 ghz buffer amplifier for use in the lo chain of point to point radios, point to multi- point communications, lmds, and other millimeter wave applications. in conjunction with ot her iterra amplifiers, multipliers and mixers it forms part of a complete 38 ghz transmit/rece ive chipset. the ITR33001 utilizes iterra?s 0.25m power phemt process and is sufficiently versatile to serve in a variety of medium power amplifier applications. electrical characteristics (at 25c), 50 system, vd=+4 v, quiescent current idq=112 ma parameter min typ max unit frequency range 32 35 ghz gate supply voltage (vg) 1 -0.2 v gain small signal (pin= -15 dbm) 20 24 db gain variation vs. frequency 2.0 db power output saturated: (pin=+1 dbm) 17 19 dbm drain current at psat 120 ma note: 1. typical range of gate voltage is -0.5 to 0v to set idq of 112 ma. absolute ratings parameter symbol value units positive dc voltage (+4 v typical) vd +6 volts negative dc voltage vg -2 volts simultaneous (vd - vg) vdg 8 volts positive dc current i d 173 ma rf input power (from 50 source) p in +8 dbm operating baseplate temperature t c -30 to +85 c storage temperature range t stg -55 to +125 c thermal resistance r jc 130 c/w (channel to backside) parameter min typ max unit power added efficiency (pae): at psat 15 % input return loss (pin=-15 dbm) 12 db output return loss (pin=-15 dbm) 12 db dc detector voltage at pout=18 dbm 1.0 v
iterra communications 2400 geng road, ste. 100, palo alto, ca 94303 phone (650) 424-1937 fax(650) 424-1938 r3.1 sept. 22, 2004 doc. 1327 page 2 of 6 www.iterrac.com ITR33001 33 ghz buffer amplifier mmic this is a production data sheet. se e ?product status definitions? on web site or catalog for product development status. caution: this is an esd sensitive device. chip carrier material should be selected to have gaas compatible thermal coefficient of expansion and high thermal conductivity such as copper moly bdenum or copper tungsten. the chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325c for 15 minutes. die attachment should utilize gold/tin (80/20) eutectic alloy solder and should avoid hydrogen environment for phemt devices. note that the backsi de of the chip is gold pl ated and is used as rf and dc ground. these gaas devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces . these are esd sensitive devices and should be handled with appropriate precaution including t he use of wrist grounding straps. all die attach and wire/ribbon bond equipment must be well grounded to prev ent static discharges through the device. recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. the rf input and output bonds should be typically 0.012? long corresponding to a typical 2 mil gap between the chip and the substrate material. application information figure 1 functional block diagram drain supply vd1 drain supply vd2 mmic chip rf in gate supply vg ground (back of chip) rf out output power detector voltage vdet drain supply vd3 drain supply vd4 note: detector delivers > 0.1 v dc into 3k load resistor for >+18 dbm output power. if output power level detection is not desired, do not connect to detector bond pad.
iterra communications 2400 geng road, ste. 100, palo alto, ca 94303 phone (650) 424-1937 fax(650) 424-1938 r3.1 sept. 22, 2004 doc. 1327 page 3 of 6 www.iterrac.com ITR33001 33 ghz buffer amplifier mmic this is a production data sheet. se e ?product status definitions? on web site or catalog for product development status. figure 2 schematic of application circuit note: detector delivers > 0.1 v dc into 3k load resistor for >+18dbm output power. if output power level detection is not desired, do not connect to detector bond pad. ground (back of chip) mmic chip rf in rf out bond wires 100 pf 100 pf 100 pf 100 pf bond wires 10,000 pf 100 pf bond wires bond wires 3 k drain supply vd=4 v gate supply vg 10,000 pf 100 pf output power detector voltage vdet 10,000 pf figure 3 chip layout and bond pad locations chip size is 3.19 mm x 1.19 mm x 100 m. back of chip is rf and dc ground dimensions in mm 0.00 0.10 0.415 0.57 0.725 1.09 1.19 0.00 0.10 0.415 0.57 0.725 1.09 1.19 0.10 0.60 2.85 3.09 3.19 3.19 0.00 0.82 1.34 1.83 2.58 0.00
iterra communications 2400 geng road, ste. 100, palo alto, ca 94303 phone (650) 424-1937 fax(650) 424-1938 r3.1 sept. 22, 2004 doc. 1327 page 4 of 6 www.iterrac.com ITR33001 33 ghz buffer amplifier mmic this is a production data sheet. se e ?product status definitions? on web site or catalog for product development status. figure 4 recommended assembly diagram 100pf rf input rf output 5mil thick alumina 50-ohm 5 mil thick alumina 50-ohm 2 mil gap l< 0.015? (4 places) die-attach 80au/20sn 10,000pf 100pf 10,000pf 10,000pf 100pf 100pf 100pf 100pf drain supply vd= 4 v gate supply v g output power detector voltage v det 3k note: use 0.003? by 0.0005? gold ribbon for bonding. rf input and out put bonds should be less than 0.015? long with stress relief. caution: loss of gate voltage (vg) while drain voltage (vd) is present may damage the amplifier chip. the following sequence must be followed to properly test the amplifier. test procedure for biasing and operation step 1: turn off rf input power. step 2: connect the dc supply grounds to the grounds of the chip carrier. slowly apply negative gate bias supply voltage of -1.5 v to vg. step 3: slowly apply positive drain bias supply voltage of +4 v to vd. step 4: adjust gate bias voltage to set the quiescent current of idq=112 ma. step 5: after the bias condition is established, rf input signal may now be applied at the appropriate frequency band. step 6: follow turn-off sequence of: (i) turn off rf input power, (ii) turn down and off drain voltage (vd), (iii) turn down and off gate bias voltage (vg).
iterra communications 2400 geng road, ste. 100, palo alto, ca 94303 phone (650) 424-1937 fax(650) 424-1938 r3.1 sept. 22, 2004 doc. 1327 page 5 of 6 www.iterrac.com ITR33001 33 ghz buffer amplifier mmic this is a production data sheet. se e ?product status definitions? on web site or catalog for product development status. performance data 16 18 20 22 24 26 30 31 32 33 34 35 36 37 frequency (ghz) s21 (db) -25 -20 -15 -10 -5 0 s11, s22 (db) s21 s22 s11 ITR33001 33 ghz ba, typical small signal performance 50 fixture measurements, vd=4 v, idq= 112 ma, t=25 c 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 frequency (ghz) s21 (db) -30 -25 -20 -15 -10 -5 0 s11, s22 (db) s21 s22 s11 ITR33001 33 ghz ba, typical small signal performance 50 fixture measurements, vd=4 v, idq= 112 ma, t=25 c
iterra communications 2400 geng road, ste. 100, palo alto, ca 94303 phone (650) 424-1937 fax(650) 424-1938 r3.1 sept. 22, 2004 doc. 1327 page 6 of 6 www.iterrac.com ITR33001 33 ghz buffer amplifier mmic this is a production data sheet. se e ?product status definitions? on web site or catalog for product development status. 13 14 15 16 17 18 19 20 21 22 31 32 33 34 35 36 fr e que ncy (ghz ) p3db (dbm), g3db (db) performance data 10 11 12 13 14 15 16 17 18 19 20 -12 -10 -8 -6 -4 -2 0 pin (dbm) pout (dbm) 16 17 18 19 20 21 22 23 24 25 26 gain (db) 32 ghz 33 ghz 34 ghz 35 ghz p3db (t=25oc) g3db (t=75oc) p3db (t=75oc) ITR33001 33 ghz ba, power output and gain vs. power in 50 fixture measurements, vd=4 v, idq=112 ma, t=25 c ITR33001 33 ghz ba, power output and gain at 3 db compression vs. frequency and temperature, 50 fixture measurements, vd=4 v, idq=112 ma g3db (t=25oc)
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